2N7002KDW 115ma, 60v dual n-channel small signal mosfet elektronische bauelemente 31-dec-2009 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. 123 654 s 1 d 1 d 2 s 2 g 1 g 2 rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? low on-resistance ? fast switching speed ? low-voltage drive ? easily designed drive circuits ? esd protected:2000v mechanical data ? case: sot-363 ? case material-ul flammability rating 94v-0 ? terminals: solderable per mil-std-202, method 208 ? weight: 0.006 grams(approx.) device marking: rk maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit drain ? source voltage v ds 60 v gate ? source voltage v gs 20 v continuous drain current i d 115 ma pulsed drain current i dp 1 800 ma continuous reverse drain current i d 115 ma pulsed reverse drain current i drp 1 800 ma power dissipation p d 225 mw operating junction & storage temperature range t j , t stg -55~150 c note: 1. pw Q 10 s, duty cycle Q 1% 2. when mounted on a 1x0.75x0.062 inch glass epoxy board electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition off characteristics drain-source breakdown voltage v (br)dss 60 - - v v gs =0v, i d =10 a zero gate voltage drain current i dss - - 1.0 a v ds =60v, v gs =0v gate-source leakage i gss - - 10 a v ds =0v , v gs =20v on characteristics gate-threshold voltage v gs(th) 1 1.85 2.5 v v ds = v gs, i d =250 a static drain-source on resistance r ds(on) - - 7.5 ? v gs =10v, i d =0.5a - - 7.5 v gs =5v, i d =0.05a forward transfer admittance g fs * 80 - - ms v ds =10v, i d =0.2a dynamic characteristics input capacitance c iss - 25 50 pf v ds =25v output capacitance c oss - 10 25 v gs =0v reverse transfer capacitance c rss - 3.0 5 f=1mhz switching characteristics turn-on delay time t d(on) - 12 20 ns v dd =30v, i d =0.2a turn-off delay time t d(off) - 20 30 r l =150 ? , v gs =10v, r g =10 ? * pw Q 300 s, duty cycle Q 1% sot-363 ref. millimete r ref. millimete r min. max. min. max. a 2.00 2.20 g 0.100 ref. b 2.15 2.45 h 0.525 re f . c 1.15 1.35 j 0.08 0.15 d 0.90 1.10 k 8 e 1.20 1.40 l 0.650 typ. f 0.15 0.35 b l f h c j d g k a e 1 2 3 6 5 4
2N7002KDW 115ma, 60v dual n-channel small signal mosfet elektronische bauelemente 31-dec-2009 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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